Igbt Snubber - AC Filter Capacitor (AKMJ-MC) - CRE

Description:

Product Detail

Product Tags

Feedback (2)

Inceptis pulchris inceptis administratione experientias et unum exemplar ad hominem subsidium faciunt magni momenti negotii incepti communicationis ac faciles intellectus exspectationes tuas proDc Capacitor , Low Power Damnum Inductione Calefaciens Capacitor , Ac Filtering SolutionsSumus maiores nostros facturi sumus, ut necessaria praevia clientium satisfaciat vel excedat bonis optimis, conceptibus provectis et oeconomicis et opportunis societatibus.Omnes clientes suscipimus.

Price Igbt Snubber - AC Filter Capacitor (AKMJ-MC) - CRE Detail:

Technical data

Operans temperatus range		Max.Operating siccus: +85℃ Superior categoria temperatus:+70℃ Categoria inferior temperatus:-40℃
facultatem range	Unius phase	20UF～500μF
	three-phase	3×40UF～3×200μF
Rated voltage		330V.AC/50Hz～1140V.AC/50Hz
Cap.tol		±5%(J);
sustinere voltage		Vt-t	2.15Un /10S
		Vt-c	1000+2×Un V.AC 60S(min3000V.AC)
Plus intentione		1.1Un (30% of on-per-onus).
		1.15Un(30min/day)
		1.2Un(5min/day)
		1.3Un(1min/day)
		1.5Un(100ms omni tempore, 1000times in vita sua)
Dissipatio factor		tgδ≤0.002 f=100Hz
		tgδ≤0.0002
Nulla resistentia		RS*C≥10000S(at20℃ 100V.DC)
Flamma retardatio		UL94V-0
Maximum aititude		2000m
		Cum altitudo supra 2000m ad infra 5000m sit, necesse est usum quantitatis imminutae considerare.(pro unoquoque augmento 1000m, intentione et currenti per 10%) redigentur.
Vitae probabilitas		100000h(Un; Θhotspot≤55 °C)
Reference vexillum		IEC61071;IEC 60831;

Feature

Aluminium rotundum involucrum habitationi, resina obsignatum;

2. Copper nucis / cochleae ducit, insulatas operculum plasticum situm;

3. Magnae capacitatis, nativus dimensionis;

4. Resistentia ad alta intentione, cum auto-healing;

5. Alte laniatus vena, alta dv/dt contagia facultatem.

Applicationem

1. Late in potestate instrumentorum electronicorum pro AC percolando adhibita.

2. In summus potentiae UPS, mutandi copia, invertendi et alia instrumenta ad AC filter, harmonicas ac factorem potestatis melioris adhibitae sunt.

Typical circuitus

mc2

Vitae probabilitas

mc3

Forma extractionem unius Phase

ΦD(mm)	P(mm)	H1(mm)	S	F	M
76	32	20	M12×16	M6×10	M8×20
86	32	20	M12×16	M6×10	M8×20
96	45	20	M12×16	M6×10	M8×20
116	50	22	M12×16	M6×10	M8×20
136	50	30	M16×25	M6×10	M8×20

mc4

mc5

Adumbratim extractio tria Phase

ΦD(mm)	H1(mm)	S	F	M	D1	P
116	40	M12×16	M6×10	M8×20	50	43.5
136	30	M16×25	M6×10	M8×20	60	52

mc6

Voltage			Un=330V.AC Us=1200V
Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
80	76	80	40	80	6.4	19.2	30	4	4.2	32	0.5
120	86	80	40	70	8.4	25.2	40	2.8	3.3	32	0.7
150	96	80	45	70	10.5	31.5	50	3.5	1.7	45	0.75
170	76	130	50	60	10.2	30.6	60	3.2	1.3	32	0.75
230	86	130	50	60	13.8	41.4	70	2.4	1.3	32	1.1
300	96	130	50	50	15.0	45.0	75	2.8	1.0	45	1.2
420	116	130	60	50	21.0	63.0	80	1.9	1.2	50	1.6

Voltage			Un=450V.AC Us=1520V
Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
50	76	80	40	90	4.5	13.5	30	4	4.2	32	0.5
65	86	80	50	80	5.2	15.6	40	2.8	3.3	32	0.7
80	96	80	45	80	6.4	19.2	50	3.5	1.7	45	0.75
100	76	130	50	70	7.0	21.0	60	3.2	1.3	32	0.75
130	86	130	45	60	7.8	23.4	70	2.4	1.3	32	1.1
160	96	130	50	50	8.0	24.0	75	2.8	1.0	45	1.2
250	116	130	60	50	12.5	37.5	80	1.9	1.2	50	1.6

Voltage			Un=690V.AC Us=2100V
Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
40	76	130	50	100	4.0	12.0	30	2.8	6.0	32	0.75
50	76	150	45	90	4.5	13.5	35	2.4	5.1	32	0.85
60	86	130	45	80	4.8	14.4	40	2.2	4.3	32	1.1
65	86	150	50	80	5.2	15.6	45	1.8	4.1	32	1.2
75	96	130	50	80	6.0	18.0	50	1.5	4.0	45	1.2
80	96	150	55	75	6.0	18.0	60	1.2	3.5	45	1.3
110	116	130	60	70	7.7	23.1	65	0.8	4.4	50	1.6
120	116	150	65	50	6.0	18.0	75	0.6	4.4	50	1.8

Voltage			Un=850V.AC Us=2850V
Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
25	76	130	50	110	2.8	8.3	35	1.5	8.2	32	0.75
30	76	150	60	100	3.0	9.0	40	1.2	7.8	32	0.85
32	86	130	45	100	3.2	9.6	50	1.15	5.2	32	1.1
45	86	150	50	90	4.1	12.2	50	1.05	5.7	32	1.2
40	96	130	50	90	3.6	10.8	50	1	6.0	45	1.2
60	96	150	60	85	5.1	15.3	60	0.9	4.6	45	1.3
60	116	130	60	80	4.8	14.4	65	0.85	4.2	50	1.6
90	116	150	65	75	6.8	20.3	75	0.8	3.3	50	1.8

Cn.		φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms (A)	ESR(mΩ)	Rth(K/W)	P(mm)	pondus (Kg)

	Voltage			Un=400V.AC Us=1200V
	Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
3×	110	116	130	100	60	6.6	19.8	3×50	3×0.78	4.5	43.5	1.6
3×	145	116	180	110	50	7.3	21.8	3×60	3×0.72	3.8	43.5	2.4
3×	175	116	210	120	50	8.8	26.3	3×75	3×0.67	3.5	43.5	2.7
3×	200	136	230	125	40	8.0	24.0	3×85	3×0.6	2.1	52	4.2

	Voltage			Un=500V.AC Us=1520V
	Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
3×	100	116	180	100	80	8.0	24.0	3×45	3×0.78	4.5	43.5	2.6
3×	120	116	230	120	70	8.4	25.2	3×50	3×0.72	3.8	43.5	3
3×	125	136	180	110	40	5.0	15.0	3×70	3×0.67	3.5	52	3.2
3×	135	136	230	130	50	6.8	20.3	3×80	3×0.6	2.1	52	4.2

	Voltage			Un=690V.AC Us=2100V
	Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
3×	49	116	230	120	70	3.4	10.3	3×56	3×0.55	2.1	43.5	3
3×	55.7	136	230	130	90	5.0	15.0	3×56	3×0.4	2.1	52	4.2

	Voltage			Un=850V.AC Us=2580V
	Cn.	φD	H	esl (nH)	dv/dt(V/μS)	Ip(KA)	Estne (KA)	Irms(A)50℃	ESR (mΩ) @1KHz	Rth(K/W)	P(mm)	pondus (Kg)
3×	41.5	116	230	120	80	3.0	9.0	3×56	3×0.55	2.1	43.5	3
3×	55.7	136	230	130	50	0.4	1.2	3×104	3×0.45	1.8	52	4.2