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Summus Current film Capacitor Snubber ad Welding Machina (SMJ-TC)

Description:

Capacitor Model: SMJ-TC

Features:

1. Aeris nuces electrodes

2. Parvus corporis magnitudine ac facile institutionem

3. Mylar tape coluber technologiae

4. arida resinae saturitatem

5. Series Inductance Equivalent Low (ESL) and Series Equivalent Resistentia (ESR)

Applicationes:

1. GTO Snubber

2. Pecco intentione et Pecco Current Absorptionis et Praesidium pro Switching Component in Electronic Equipment

 

Snubber circuitus essentiales sunt pro diodis in circuitibus mutandis.Diode ex spicis supervoltationibus servare potest, quae durante processu recuperationis inverso oriri potest.


Product Detail

Product Tags

Technical data

Operans temperatus range Max.Operating temperatus
facultatem range

0.22~3μF

Rated voltage

3000V.DC~10000V.DC

Cap.tol

±5%(J);±10%(K)

sustinere voltage

1.35Un DC/10S

Dissipatio factor

tgδ≤0.001 f=1KHz

Nulla resistentia

C≤0.33μF RS≥15000 MΩ (ante 20℃ 100V.DC 60S)

C>0.33μF RS*C≥5000S (ante 20℃ 100V.DC 60S)

Percutiens resistere current

vide datasheet

Vitae probabilitas

100000h(Un; Θhotspot≤70°C)

Reference vexillum

IEC 61071 ;

Feature

1. Mylar taenia, resina obsignata;

2. Aes nucem ducit;

Resistentia ad alta intentione, humilis tgδ, humilis temperatus oritur;

4. humilis esL et esr;

5. Maximum venae venae.

Applicationem

1. GTO Snubber.

2. Late usus est in instrumento electronico potentiae cum apicem voltage, apicem venae effusio custodiendi.

Typical circuitus

1

Forma drawing

2

Specification

Un=3000V.DC

Facultas (μF)

φD (mm)

L(mm)

L1(mm)

esl (nH)

dv/dt(V/μS)

Ipk(A)

Irms (A)

0.22

35

44

52

25

1100

242

30

0.33

43

44

52

25

1000

330

35

0.47

51

44

52

22

850

399

45

0.68

61

44

52

22

800

544

55

1

74

44

52

20

700

700

65

1.2

80

44

52

20

650

780

75

1.5

52

70

84

30

600

900

45

2.0

60

70

84

30

500

1000

55

3.0

73

70

84

30

400

1200

65

4.0

83

70

84

30

350

1400

70

Un=6000V.DC

Facultas (μF)

φD (mm)

L(mm)

L1(mm)

esl (nH)

dv/dt(V/μS)

Ipk(A)

Irms (A)

0.22

43

60

72

25

1500

330

35

0.33

52

60

72

25

1200

396

45

0.47

62

60

72

25

1000

470

50

0.68

74

60

72

22

900

612

60

1

90

60

72

22

800

900

75

 

Un=7000V.DC

Facultas (μF)

φD (mm)

L(mm)

L1(mm)

esl (nH)

dv/dt(V/μS)

Ipk(A)

Irms (A)

0.22

45

57

72

25

1100

242

30

0.68

36

80

92

28

1000

680

25

1.0

43

80

92

28

850

850

30

1.5

52

80

92

25

800

1200

35

1.8

57

80

92

25

700

1260

40

2.0

60

80

92

23

650

1300

45

3.0

73

80

92

22

500

1500

50

 

Un=8000V.DC

Facultas(μF)

φD (mm)

L(mm)

L1(mm)

esl (nH)

dv/dt(V/μS)

Ipk(A)

Irms (A)

0.33

35

90

102

30

1100

363

25

0.47

41

90

102

28

1000

470

30

0.68

49

90

102

28

850

578

35

1

60

90

102

25

800

800

40

1.5

72

90

102

25

700

1050

45

2.0

83

90

102

25

650

1300

50

 

Un=0000V.DC

Facultas (μF)

φD (mm)

L(mm)

L1(mm)

esl (nH)

dv/dt(V/μS)

Ipk(A)

Irms (A)

0.33

45

114

123

35

1500

495

30

0.47

54

114

123

35

1300

611

35

0.68

65

114

123

35

1200

816

40

1

78

114

123

30

1000

1000

55

1.5

95

114

123

30

800

1200

70


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