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Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE

Decoronationes pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE Imago Featured
  • Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE
  • Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE
  • Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE
  • Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE

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Persuasum est nobis communibus conatibus negotium inter nos afferre mutua beneficia.Certiorem te productum pretium pro competitive et qualis possumusPcb Capacitor , Igbt Snubber Capacitor , (Multi-Hour molem Energy PRAECLUSIO Using CapacitorsPretia omnia ex quantitate ordinis vestri;extra quam emo, extra oeconomicum est.OEM provisor phantasticus etiam offerimus multis notis famosis.
Procuratio Sociorum pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta applicationes venarum - CRE Detail:

Technical data

Operans temperatus range Max.Operating temperatus
facultatem range 0.1μF～5.6μF
Rated voltage

630V.DC～2000V.DC
Cap.tol

±5%(J);±10%(K)
sustinere voltage

1.5Un DC/10S
Dissipatio factor

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Nulla resistentia

C≤0.33μF RS≥15000 MΩ (ante 20℃ 100V.DC 60S)

C＞0.33μF RS*C≥5000S (ante 20℃ 100V.DC 60S)
Percutiens resistere current
Vitae probabilitas

100000h(Un; Θhotspot≤85°C)
Reference vexillum

IEC 61071 ;IEC 61881;GB/T17702

Applicationem

1. IGBT Snubber, GTO snubber

2. Late usus est in instrumento electronico potentiae cum apicem voltage, apicem venae effusio custodiendi.

Forma drawing

1

SMJ-TE Axial Capacitor
Voltage Un630V.DC;Urms400Vac; Nobis 945V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2
Voltage Un 1000V.DC;Urms 500Vac;Us 1500V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2
Voltage Un 1200V.DC;Urms 550Vac;Us 1800V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2
Voltage Un 1700V.DC;Urms 600Vac;Us 2550V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2
Voltage Un 2000V.DC;Urms 700Vac;Us 3000V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.093 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8
Voltage Un 3000V.DC;Urms 750Vac;Us 4500V
Facultas (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms @25@100KHz (A)
0.041 44 13.5 21.5 1 22 20 2000 94 8.5
0.093 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5

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Detail imaginibus productum:

Factio Companies pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta venarum applicationes - CRE detail imaginibus

Factio Companies pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta venarum applicationes - CRE detail imaginibus

Factio Companies pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta venarum applicationes - CRE detail imaginibus

Factio Companies pro film Power Capacitor Potentia Generationis - Polypropylene Snubber Capacitores usi sunt in alta intentione, alta vena et alta venarum applicationes - CRE detail imaginibus

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