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Tutus Price China Ac film Capacitor - Metalized film IGBT Snubber capacitor - CRE

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Saepe mos ordinatur, et scopum nostrum ultimum fieri potest non solum probabiliter provisor honestissimus, fidelis et honestus, sed etiam socius pro clientibus nostris proUltracapacitor Pugna , Humilis Esl Film Capacitor , Snubber Capacitor enim IgbtIam habemus quatuor solutiones principales.Producta nostra efficacissima venditi sunt non solum in mercatu Sinensi, sed etiam in industria internationali excepti.
Tutus Price China Ac film Capacitor - Metalized film IGBT Snubber capacitor - CRE Detail:

Technical data

 

Operans temperatus range Max.Operating temperatura
facultatem range 0.1μF~5.6μF
Rated voltage 700V.DC~3000V.DC
Cap.tol ±5%(J);±10%(K)
sustinere voltage 1.5Un DC/10S
Dissipatio factor tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Nulla resistentia

C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S)

C>0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)

Percutiens resistere current

具体 见 规格表

Flamma retardatio

UL94V-0

Vitae probabilitas

100000h(Un; Θhotspot≤85°C)

Reference vexillum

IEC61071;GB/T17702;

 

Voltage Un 700V.DC,Urms400Vac;Us1050V
Diemension(mm)
Cn(μF) L(±1) T(±1) H(±1) ESR @100KHz (mΩ) esl (nH) dv/dt (V/μS) Ipk(A) Irms @40℃ @100KHz (A)
0.47 42.5 24.5 27.5 12 25 500 235 8
0.68 42.5 24.5 27.5 10 25 480 326.4 10
1 42.5 24.5 27.5 8 24 450 450 12
1.5 42.5 33.5 35.5 7 25 430 645 5
2 42.5 33 35.5 6 24 420 840 15
2.5 42.5 33 45 6 23 400 1000 18
3 42.5 33 45 5.5 22 380 1140 20
3 57.5 30 45 5 26 350 1050 22
3.5 42.5 33 45 5 23 350 1225 25
3.5 57.5 30 45 6 25 300 1050 22
4.7 57.5 35 50 5 28 280 1316 25
5.6 57.5 38 54 4 30 250 1400 25
6 57.5 38 54 3.5 33 230 1380 28
6.8 57.5 42.5 56 3.2 32 220 1496 32
8 57.5 42.5 56 2.8 30 200 1600 33

 

Voltage Un 1000V.DC,Urms500Vac;Us1500V
Diemension(mm)
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 25 1000 470 10
0.68 42.5 24.5 27.5 8 25 800 544 12
1 42.5 33.5 35.5 6 24 800 800 15
1.5 42.5 33 45 6 24 700 1050 15
2 42.5 33 45 5 22 700 1400 20
2.5 57.5 30 45 5 30 600 1500 22
3 57.5 35 50 4 30 600 1800 25
3.3 57.5 35 50 3.5 28 550 1815 25
3.5 57.5 38 54 3.5 28 500 1750 25
4 57.5 38 54 3.2 26 500 2000 28
4.7 57.5 42.5 56 3 25 420 1974 30
5.6 57.5 42.5 56 2.8 24 400 2240 32

 

Voltage Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 24 1200 564 10
0.68 42.5 33.5 35.5 7 23 1100 748 12
1 42.5 33.5 35.5 6 22 800 800 14
1.5 42.5 33 45 5 20 800 1200 15
2 57.5 30 45 4 30 750 1500 20
2.5 57.5 35 50 4 28 700 1750 25
3 57.5 35 50 4 27 600 1800 25
3.3 57.5 38 54 4 27 550 1815 28
3.5 57.5 38 54 3.5 25 500 1750 28
4 57.5 42.5 56 3.5 25 450 1800 30
4.7 57.5 42.5 56 3.2 23 420 1974 32

 

Voltage Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms
0.33 42.5 24.5 27.5 12 25 1300 429 9
0.47 42.5 24.5 27.5 10 24 1300 611 10
0.68 42.5 33.5 35.5 8 23 1300 884 12
1 42.5 33 45 7 22 1200 1200 15
1.5 42.5 33 45 6 22 1200 1800 18
1.5 57.5 30 45 5 31 1200 1800 20
2 57.5 30 45 5 30 1100 MMCC 22
2.5 57.5 35 50 4 28 1100 2750 25
3 57.5 38 54 4 27 700 2100 25
3.3 57.5 38 54 3.8 26 600 1980 28
3.5 57.5 42.5 56 3.5 25 500 1750 30
4 57.5 42.5 56 3.2 25 450 1800 32

 

Voltage Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms
0.22 42.5 24.5 27.5 15 25 1500 330 10
0.33 42.5 33.5 35.5 12 24 1500 495 12
0.47 42.5 33.5 35.5 11 23 1400 658 15
0.68 42.5 33 45 8 22 1200 816 18
0.68 57.5 30 45 7 30 1100 748 20
0.82 42.5 33 45 7 28 1200 984 22
1 57.5 30 45 6 28 1100 1100 25
1.5 57.5 35 50 5 25 1000 1500 28
2 57.5 38 54 5 24 800 1600 28
2.2 57.5 42.5 56 4 23 700 1540 32

 

Voltage Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) esl (nH) dv/dt(V/μS) Ipk(A) Irms
0.15 42.5 33 45 18 28 2500 375 25
0.22 42.5 33 45 15 27 MMCC 484 28
0.22 57.5 35 50 15 25 2000 330 20
0.33 57.5 35 50 12 24 1800 495 20
0.47 57.5 38 54 11 23 1600 752 22
0.68 57.5 42.5 56 8 22 1500 1020 28

Feature

1. Plastic, resina signata;

2. Aes plumbi inauratum adiicit facilem institutionem pro IGBT;

Resistentia ad alta intentione, humilis tgδ, temperatura humilis oritur;

4. humilis esL et esr;

5. Maximum venae venae.

Utendis humilibus inductionibus internarum constructionum, resinarum causarum ad libitum formatarum, et terminationes nativus, SMJ-P Series designantur ad velocitatem commutationes IGBTS et potest esse simiae et altae venae frequentiae input filtra.


Detail imaginibus productum:

China Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE detail pictures

China Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE detail pictures

China Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE detail pictures

China Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE detail pictures


Related Product Guide:

Manemus cum societate nostra spiritus "Qualitas, euismod, Innovatio et Integritas".Propositum est pluris creare clientibus nostris cum opibus nostris copiosis, machinationibus provectis, peritis opificum et solutionibus eximiis pro Tutus Price Sinis Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE, Productum suppeditabit toto orbe terrarum, ut Albania, Mecca, Mongolia, omnes fructus nostri clientes exportantur in UK, Germania, Gallia, Hispania, USA, Canada, Irania, Iraq, Medio Oriente et Africa.Producta nostra bene a clientibus nostris accipiuntur pro qualitate excellentia, pretia competitive et stili aequissimi.Speramus mercaturam cum omnibus clientibus instituere et colores pulchriores ad vitam adducere.
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